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july 2015 docid027600 rev 2 1 / 15 this is information on a prod uct in full production. www.st.com stf26n60m2, STFI26N60M2 n - channel 600 v, 0.14 typ., 20 a mdmesh? m2 power mosfets in to - 220fp and i2pakfp packages datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax r ds(on) max. i d p tot stf26n60m2 650 v 0.165 20 a 30 w STFI26N60M2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications ? lcc converters, resonant converters description these devices are n - channel power mosfets developed usin g mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. table 1: device summary order code marking package packing stf26n60m2 26n60m2 to - 220fp tube STFI26N60M2 i2pakfp t o - 22 0 f p i 2 p akfp (to-281) 1 2 3 1 2 3 am15572v1_no_tab d(2) g(1) s(3)
contents stf26n60m2, STFI26N60M2 2 / 15 docid027600 rev 2 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 6 3 test circuits ..................................................................................... 8 4 package information ....................................................................... 9 4.1 to - 220fp package informatio n ...................................................... 10 4.2 i2pakfp (to - 281) package information ......................................... 12 5 revision history ............................................................................ 14
stf26n60m2, STFI26N60M2 e lectrical ratings docid027600 rev 2 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d (1) drain current (continuous) at t case = 25 c 20 a drain current (continuous) at t case = 100 c 13 i dm (2) drain current (pulsed) 80 a p tot total dissipation at t case = 25 c 30 w dv/dt (3) peak diode recovery voltage slope 15 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2.5 kv t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) limited by maximum junction temperature. (2) pulse width is limited by safe operating area. (3) i sd 2 0 a, di/dt=400 a/s; v ds(peak) < v (br)dss , v dd = 80% v (br)dss . (4) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 4.2 c/w r thj - amb thermal resistance junction - ambient 62.5 table 4: avalanche characteristics symbol parameter value unit i ar (1) avalanche current, repetitive or not repetitive 3.8 a e ar (2) single pulse avalanche energy 250 mj notes: (1) pulse width limited by t jmax . (2) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics stf26n60m2, STFI26N60M2 4 / 15 docid027600 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 10 a 0.14 0.165 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1360 - pf c oss output capacitance - 88 - c rss reverse transfer capacitance - 2 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 124 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4 - q g total gate charge v dd = 4 8 0 v, i d = 20 a, v gs = 10 v (see figure 15: "gate charge test circuit" ) - 34 - nc q gs gate - source charge - 5.6 - q gd gate - drain charge - 16.3 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 1 0 a r g = 4.7 , v gs = 10 v (see figure 14: "switching times test circuit for resistive load" and figure 19: "switching time waveform" ) - 20.2 - ns t r rise time - 8 - t d(off) turn - off delay time - 66 - t f fall time - 10 -
stf26n60m2, STFI26N60M2 electrical characteristics docid027600 rev 2 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 20 a i sdm (1) source - drain current (pulsed) - 80 a v sd (2) forward on voltage v gs = 0 v, i sd = 2 0 a - 1.6 v t rr reverse recovery time i sd = 2 0 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 360 ns q rr reverse recovery charge - 5 c i rrm reverse recovery current - 27 a t rr reverse recovery time i sd = 2 0 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 556 ns q rr reverse recovery charge - 8 c i rrm reverse recovery current - 29 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics stf26n60m2, STFI26N60M2 6 / 15 docid027600 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
stf26n60m2, STFI26N60M2 electrica l characteristics docid027600 rev 2 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normal ized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits stf26n60m2, STFI26N60M2 8 / 15 docid027600 rev 2 3 test circuits figure 14 : switching times test circuit for resistive load figure 15 : gate charge test circuit figure 1 6 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
stf26n60m2, STFI26N60M2 package information docid027600 rev 2 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in di fferent grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information stf26n60m2, STFI26N60M2 10 / 15 docid027600 rev 2 4.1 to - 220fp package information figure 20 : to - 220fp package outline 7012510_ r ev_k_b
stf26n60m2, STFI26N60M2 package information docid027600 rev 2 11 / 15 table 9: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package in formation stf26n60m2, STFI26N60M2 12 / 15 docid027600 rev 2 4.2 i2pakfp (to - 281) package information figure 21 : i2pakfp (to - 281) package outline 8291506 re v . c
stf26n60m2, STFI26N60M2 package information docid027600 rev 2 13 / 15 table 10: i2pakfp (to - 281) mechanical data dim. mm min. typ. max. a 4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.50 7.60 7.70
revision history stf26n60m2, STFI26N60M2 14 / 15 docid027600 rev 2 5 revision history table 11: document revision history date revision changes 05- mar -2015 1 first release. 3 0 -j uly -2015 2 text and formatting changes throughout document datasheet promoted from preliminary data to production data in section electrical characteristics : - updated and renamed table static (was on/off states) - updated table dynamic , switching times and source - drain diode - added section electrical characteristics (curves)
stf26n60m2, STFI26N60M2 docid027600 rev 2 15 / 15 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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